Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same

ABSTRACT

A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the alignment film and the organic insulating film, wherein the first etch rate is different from the second etch rate.

[0001] The present invention claims the benefit of Korean PatentApplication No. P2001-28756 filed in Korea on May 24, 2001, which ishereby incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a display device and method offabricating the same, and more particularly to a liquid crystal displaydevice and a fabricating method thereof, and a reworking method ofalignment film using the same.

[0004] 2. Discussion of the Related Art

[0005] In general, a liquid crystal display device controls lighttransmissivity of liquid crystal molecules by application of an electricfield, thereby displaying an image. The liquid crystal display deviceincludes a liquid crystal display panel where liquid crystal cells arearranged in a matrix configuration, and a driving circuit is providedfor driving the liquid crystal display panel. The liquid crystal displaypanel has a common electrode and pixel electrodes for applying anelectric field to each of the liquid crystal cells. Generally, the pixelelectrodes are formed on a lower substrate within liquid crystal cellsand the common electrode is formed on an entire surface of a uppersubstrate. Each of the pixel electrodes is connected to a switchingdevice such as a thin film transistor (TFT), for example, and togetherwith the common electrode, drive the liquid crystal cell according to adata signal supplied through the TFT.

[0006]FIGS. 1 and 2 show a liquid crystal display device according tothe conventional art. In FIG. 1, the conventional liquid crystal displaydevice includes a black matrix 32 that is sequentially formed on anupper substrate 11, an upper plate UG comprising a color filter 30 and atransparent electrode 28, a TFT that is formed on a lower substrate 1, alower plate DG comprising a pixel electrode 22, and a spacer 26 formedfor preparing an inner space to have liquid crystal molecules injectedbetween the upper plate UG and the lower plate DG. The black matrix 32is formed on the upper substrate 11 in matrix configuration to divide asurface of the upper substrate 11 into a plurality of cell areas. Colorfilters are formed in each of the plurality of cell areas to preventlight interference between adjacent cell areas. Color filters 30 of red,green and blue are sequentially formed on the upper substrate 11 wherethe black matrix 32 is formed. Accordingly, each of the color filters 30is formed by spreading a material, which absorbs white light and onlytransmits light of a specific wavelength, i.e., red, green or blue, onan entire surface of the upper substrate 11 where the black matrix 32 isformed, and then patterning the material. A material for forming thetransparent electrode 28 is spread on the upper substrate 11 where theblack matrix 32 and the color filter 30 are formed, thereby completingthe upper plate UG.

[0007] In FIG. 2, on the lower plate DG, the TFT that drives the liquidcrystal cell is formed at an intersection of a gate line 2 and a dataline 4. The pixel electrodes 22 overlap adjacent portions of the gateline 2 and the data line 4 that are arranged in a matrix configurationformed on the lower substrate 1.

[0008] FIGS. 3A-3E show a fabrication process of a portion of the liquidcrystal display device along A-A′ of FIG. 2.

[0009] In FIG. 3A, a gate metal film is formed on a lower substrate 1,and then patterned to form a gate line 2 and a gate electrode 6.

[0010] In FIG. 3B, an nsulating material is deposited on an entiresurface of the lower substrate 1 for covering the gate line 2 and thegate electrode 6, thereby forming a gate insulating film 12. First andsecond semiconductor materials are sequentially deposited on the gateinsulating film 12, and subsequently patterned, thereby forming anactive layer 14 and an ohmic contract layer 16.

[0011] In FIG. 3C, a data metal film is formed on the gate insulatingfilm 12, and then patterned, thereby forming a data line 4, a sourceelectrode 8, and a drain electrode 10. The ohmic contact layer 16 isthen etched exposing a channel portion of the active layer 14. Thechannel portion of the active layer 14 corresponds to the gate electrode6 between the source electrode 8 and the drain electrode 10.

[0012] In FIG. 3D, a protective film 18 of an organic material isdeposited on the gate insulating film 12 and then planarized using spincoating technique, The protective film 18 is then patterned, therebyforming a contact hole 20 exposing a portion of the drain electrode 10.

[0013] In FIG. 3E, a transparent conduction material is formed on theprotective film 18, and then patterned, thereby forming a pixelelectrode 22 that is electrically connected to the drain electrode 10via the contact hole 20. An alignment film 24 (of FIG. 1) is formed onan entire surface of the lower substrate 1 where the pixel electrode 22is formed. A rubbing process is performed to complete the lower plateDG. Next, as shown in FIG. 1, the upper plate UG and the lower plate DGare bonded together with a spacer 26 of spherical shape positioned alonga periphery therebetween. Finally, liquid crystal molecules are injectedin a cavity between the bonded upper and lower plates UG and DG, therebycompleting the liquid crystal display device.

[0014] However, after formation of the protective film 18, a significantamount of time passes before the pixel electrode 22 is formed, andcontaminants are absorbed by the surface of the protective film 18.Accordingly, the alignment film 24 is poorly formed on the contaminatedsurface of the protective film 18.

[0015]FIG. 4 shows the result of a poorly formed alignment film 36 on acontaminated surface of a protective film 18. Accordingly, processing isperformed for reworking the poorly formed alignment film 36 using adry-etching technique.

[0016]FIG. 5 shows the result of performing the rework processing.First, the lower plate DG is mounted in a chamber, and O₂, O₂+Cl₂, CF₄,SF₆ gases are injected into the chamber, thereby generating a plasmadischarge. Then, the alignment film 36 is etched to be completelyremoved from the pixel electrode and protective film 18 by reactionbetween the injected gas and the alignment film 36. However, because thealignment film 36 and the protective layer 18 have similar dry-etchingrates, the protective film(18) becomes over-etched in regions A.Accordingly, since the rework processing of the alignment film causesover-etching of the protective film 18, device yield and productivityare significantly decreased.

SUMMARY OF THE INVENTION

[0017] Accordingly, the present invention is directed to a liquidcrystal display device and a fabricating method thereof, and a reworkingmethod of alignment film using the same that substantially obviates oneor more of the problems due to limitations and disadvantages of therelated art.

[0018] An object of the present invention is to provide a liquid crystaldisplay device and a method of fabricating the same where an alignmentfilm having irregularities or defects may be removed without effectingan underlying material layer.

[0019] Another object of the present invention is to provide a method ofreworking an alignment film of a liquid crystal display device.

[0020] Additional features and advantages of the invention will be setforth in the description which follows, and in part will be apparentfrom the description, or may be learned by practice of the invention.The objectives and other advantages of the invention will be realizedand attained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

[0021] To achieve these and other advantages and in accordance with thepurpose of the present invention, as embodied and broadly described, aliquid crystal display device includes a substrate, an organicinsulating film formed on the substrate, an alignment film having afirst etch rate formed on the organic insulating film, and a siliconnitride layer having a second etch rate formed between the alignmentfilm and the organic insulating film, wherein the first etch rate isdifferent from the second etch rate.

[0022] In another aspect, a method of fabricating a liquid crystaldisplay device includes forming an organic insulating film on asubstrate, forming an alignment film having a first etch rate on theorganic insulating film, and forming a silicon nitride layer having asecond etch rate between the alignment film and the organic insulatingfilm, wherein the first etch rate is different from the second etchrate.

[0023] In another aspect, a method of reworking an alignment film of aliquid crystal display device includes forming an organic protectivefilm on a substrate, forming a silicon nitride layer having a first etchrate on the organic protective film, forming a first alignment film onthe silicon nitride layer, detecting at least one irregularity of thefirst alignment film formed on the silicon nitride layer, eliminatingthe first alignment film with a second etch rate different from thefirst etch rate of the silicon nitride layer, and forming a secondalignment film on the silicon nitride layer.

[0024] It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory and are intended to provide further explanation of theinvention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings, which are intended to provide afurther understanding of the invention and are incorporated in andconstitute a part of this specification, illustrate embodiments of theinvention and together with the description serve to explain theprinciples of the invention. In the drawings:

[0026]FIG. 1 is a cross sectional view of a liquid crystal displaydevice according to the conventional art;

[0027]FIG. 2 is a plan view of a lower substrate of the liquid crystaldisplay device shown in FIG. 1;

[0028]FIGS. 3A to 3A are cross sectional views of a fabricating methodof the lower substrate of the liquid crystal display device along A-A′of FIG. 2;

[0029]FIG. 4 is a cross -sectional view of a portion of the liquidcrystal display device of FIG. 1, showing an alignment film;

[0030]FIG. 5 is a cross sectional view of an over-etched protective filmshown in FIG. 4;

[0031]FIG. 6 is a cross sectional view of an exemplary liquid crystaldisplay device according to the present invention;

[0032]FIGS. 7A to 7E are cross sectional views showing an exemplary.fabricating method of a lower substrate of the liquid crystal displaydevice of FIG. 6;

[0033]FIG. 8 is a cross sectional view showing an alignment film of theliquid crystal display device of FIG.. 6;

[0034]FIG. 9 is a cross sectional view of the liquid crystal displaydevice after removing the alignment film of FIG. 8; and

[0035]FIG. 10 is a cross sectional view of a reworked alignment film ofthe liquid crystal display device according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] Reference will now be made in detail to the preferred embodimentsof the present invention, examples of which are illustrated in theaccompanying drawings.

[0037]FIG. 6 is a cross sectional view of a liquid crystal displaydevice according to the present invention. In FIG. 6, a thin filmtransistor (TFT) may include a gate electrode 56, an active layer 64,and an ohmic contact layer 66 sequentially deposited, for example, on aportion of a gate insulating film 62 disposed above the gate electrode56. A source electrode 58 and a drain electrode 60 may be separatelyformed on the ohmic contact layer 66. A first protective layer 68 and asecond protective layer 84 may be formed over the TFT. The firstprotective layer 68 may be formed of an organic insulating material, andthe second protective layer 84 may be formed of an inorganic insulatingmaterial. For example, the second protective layer 84 may be formed ofhydrogenated silicon nitride (H-SiNx) to increase adhesive strength withthe organic insulating material of the first protective layer 68. Apixel electrode 72 includes a first portion that may be formed on a topportion of the second protecting layer 84 and a second portion that maycontact the drain electrode 60 through a contact hole 70 that penetratesthe first and second protective layers 68 and 84.

[0038] Further in FIG. 6, a gate line 52 is formed on the substrate 51upon which the gate insulating film 62 and the first and the secondprotective layers 68 and 84 are formed. The gate line 52 supplies a gatesignal to the gate electrode 56 of the TFT. An alignment film 74 may beformed to cover the TFT, gate line, and data line. The alignment filmmay be formed of polyimide, for example, for determining an initialmolecule arrangement. Accordingly, since the alignment film 74 has anetch rate different from the etch rate of the second protective film 84,the alignment film 74 may be eliminated without any loss of the firstand the second protective layers 68 and 84. Thus, the alignment film 74may be reworked without causing damage to the underlying firstprotective layer 68.

[0039]FIGS. 7A to 7F show an exemplary fabricating method of the liquidcrystal display device of FIG. 6. In FIG. 7A, a first material may bedeposited to form the gate line 52 and the gate electrode 56 on thelower substrate 51. The first material may include at least one ofAluminum (Al) and Copper (Cu), for example, deposited on the lowersubstrate 51 by a sputtering technique, for example, and thensubsequently patterned to form the gate line 52 and the gate electrode56.

[0040] In FIG. 7B, the active layer 64 and the ohmic contact layer 66may be formed on the gate insulating film 62.. The gate insulating film62 may include an insulating. material deposited on an entire surface ofthe lower substrate 51 by plasma enhanced chemical vapor depositionPECVD technique, for example, to cover the gate line 52 and the gateelectrode 56. The insulating material includes at least one of siliconnitride (SiNx) and silicon oxide (SiOx), for example. A firstsemiconductor layer and a second semiconductor layer may be deposited onthe gate insulating film 62 and then patterned, thereby forming theactive layer 64 and the ohmic contact layer 66. The first semiconductorlayer includes at least undoped amorphous silicon, and the secondsemiconductor layer includes at least amorphous silicon doped with animpurity of N-type or P-type, for example.

[0041] In FIG. 7C, a metal material such as Chromium (Cr) or molybdenum(Mo), for example, may be deposited on an entire surface of the gateinsulating film 62 by CVD technique or sputtering technique, forexample, and then patterned to form the data line 54, the sourceelectrode 58 and the drain electrode .60. After forming the source anddrain electrodes 58 and 60, a portion of the. ohmic contact layer 66corresponding to the gate electrode 56 is patterned to expose a channelportion of the active layer 64.

[0042] In FIG. 7D, a first insulating material and a second insulatingmaterial may be sequentially deposited on the gate insulating layer 62to cover the data line 54, the source electrode 5 8 and the drainelectrode 60, and then patterned to form the first protective layer 68and the second protective layer 84. The first protective layer 68 may beformed of an organic insulating material having a small dielectricconstant, such as an acrylic organic compound, Teflon, benzocyclobutene(BCB), cytop, and perfluorocyclobutane (PFCB), for example. The contacthole 70 may be formed to penetrate. the first and second protectivelayers 68 and 84 to expose a surface portion of the drain electrode 60.

[0043] The second protective layer 84 may be formed of silicon nitride(SiNx) or inorganic insulating material, for example, having an etchingrate different from an etching rate of the alignment film 74 that willbe formed later. The silicon nitride(SiNx) may include an amount ofhydrogen (H), thereby strengthening an adhesive bond to the firstprotective layer 68.

[0044] In FIG. 7E, a transparent conductive material such asindium-tin-oxide(ITO), indium-zinc-oxide(IZO) orindium-tin-zinc-oxide(ITZO), for example may be deposited on the secondprotective layer 84, and then patterned to form the pixel electrode 72.The pixel electrode 72 electrically contacts the drain electrode 60through the contact hole 70. The pixel electrode 72 may be formed tooverlap the gate line 52 with the gate insulating film 62, the firstprotective layer 68, and the second protective layer 84 sandwichedtherebetween. Furthermore, the pixel electrode 72 may be formed tooverlap the data line 54 with the first protective layer 68 and thesecond protective layer 84 sandwiched therebetween.

[0045] Finally, the alignment film such as polyimide, for example, maybe formed on an entire surface of the lower substrate on which the pixelelectrode 72 is formed. Then, a rubbing process is performed to completethe lower plate. Accordingly, if a poorly formed alignment film 86 isdetected, as shown in FIG. 8, from a result of testing the lower platewhere the alignment film 74 is formed, the process for reworking thealignment film 74 may be performed.

[0046] In FIG. 9, the poorly formed alignment film 86 may be eliminatedby using a dry-etching technique, for example, wherein the lower plateis placed within a chamber, and at least one of SF6, O2, O2+Cl2, and CF4gas is injected into the chamber, thereby generating a plasma discharge.Accordingly, the gas injected into the chamber is generally injected inthe ratio greater than or equal to SF₆:O₂=1:50, and the most desirablecase is a ratio that is greater than or equal to SF₆:O₂=1:70, wherein aradio frequency (RF) power is about 500˜1500 W. Then, the poorly formedalignment film 86 can be entirely etch away without any loss of thefirst and the second protective layers 68 and 84.

[0047] In FIG. 10, after elimination of the poorly formed alignment film86, the lower substrate 51 is conveyed to form the alignment film 74,thereby completing the rework processing.

[0048] It will be apparent to those skilled in the art that cariousmodifications and variations can be made in the liquid crystal displaydevice and fabricating method thereof, and reworking method of alignmentfilm of the present invention without departing from the spirit or scopeof the invention. Thus, it is intended that the present invention coverthe modifications and variations of this invention provided they comewithin the scope of the appended claims and their equivalents.

What is claimed is:
 1. A liquid crystal display device, comprising: asubstrate; an organic insulating film formed on the substrate; analignment film having a first etch rate formed on the organic insulatingfilm; and a silicon nitride layer having a second etch rate formedbetween the alignment film and the organic insulating film, wherein thefirst etch rate is different from the second etch rate.
 2. The deviceaccording to claim 1, wherein the alignment film is eliminated bydry-etching during rework processing.
 3. The device according to claim2, wherein the dry-etching is carried out by using at least one compoundgas of SF₆, O₂, O₂+Cl₂, and CF₄.
 4. The device according to claim 3,wherein a ratio of the compound gas is at least about SF₆:O₂=1:50. 5.The device according to claim 3, wherein a ratio of the compound gas isat least about SF₆:O₂=1:70.
 6. The device according to claim 3, whereinthe dry-etching usess a radio frequency power of about 500-1500 W. 7.The liquid crystal display device according to claim 1, wherein thesilicon nitride layer includes hydrogen.
 8. The device according toclaim 1, further comprising: a gate line on the substrate; a data linecrossing the gate line; a gate electrode connected to the gate line; agate insulating film covering the gate electrode and the gate line; asemiconductor layer formed on the gate insulating film; a sourceelectrode connected to the data line; and a drain electrode formed awayfrom the source electrode with a channel of a fixed size formedtherebetween.
 9. The device according to claim 8, wherein a pixelelectrode electrically contacts the drain electrode and overlaps atleast one of the data line and the gate line.
 10. A method offabricating a liquid crystal display device, comprising the steps of:forming an organic insulating film on a substrate; forming an alignmentfilm having a first etch rate on the organic insulating film; andforming a silicon nitride layer having a second etch rate between thealignment film and the organic insulating film, wherein the first etchrate is different from the second etch rate.
 11. The method according toclaim 10, further including eliminating the alignment film bydry-etching during rework processing.
 12. The method according to claim11, wherein the dry-etching is carried out by using at least onecompound gas of SF₆, O₂, O₂+Cl₂, and CF₄.
 13. The method according toclaim 12, wherein a ratio of the compound gas is at least aboutSF₆:O₂=1:50.
 14. The method according to claim 12, wherein a ratio ofthe compound gas is at least about SF₆:O₂=1:70.
 15. The method accordingto claim 12, wherein the dry-etching uses a radio frequency power ofabout 500-1500 W.
 16. The method according to claim 10, wherein thesilicon nitride layer includes hydrogen.
 17. The method according toclaim 10, further including the steps of: forming a gate line and a gateelectrode on the substrate; forming a gate insulating film on the gateline, the gate electrode and the substrate; forming a semiconductorlayer on the gate insulating film; and forming a data line, a sourceelectrode and a drain electrode on the gate insulating film.
 18. Themethod according to claim 17, further including the step of forming apixel electrode on the silicon nitride layer to overlap at least one ofthe data line and the gate line.
 19. A method of reworking an alignmentfilm of a liquid crystal display device, comprising the steps of:forming an organic protective film on a substrate; forming a siliconnitride layer having a first etch rate on the organic protective film;forming a first alignment film on the silicon nitride layer; detectingat least one irregularity of the first alignment film formed on thesilicon nitride layer; eliminating the first alignment film with asecond etch rate different from the first etch rate of the siliconnitride layer; and forming a second alignment film on the siliconnitride layer.
 20. The method of according to claim 19, wherein the stepof eliminating the first alignment film includes dry-etching duringrework processing.
 21. The method according to claim 20, wherein thedry-etching is carried out by using at least one compound gas of SF₆,O₂, O₂+Cl₂, and CF₄.
 22. The method according to claim 21, wherein aratio of the compound gas is at least about SF₆:O₂=1:50.
 23. The methodaccording to claim 21, wherein a ratio of the compound gas is at leastabout SF₆:O₂=1:70.
 24. The method according to claim 21, wherein thedry-etching includes a radio frequency power of about 500-1500 W. 25.The method according to claim 19, wherein the silicon nitride layerincludes hydrogen.
 26. The method according to claim 19, furtherincluding the steps of: forming a gate line and a gate electrode on thesubstrate; forming a gate insulating film on the gate line, the gateelectrode and the substrate; forming a semiconductor layer on the gateinsulating film; and forming a data line, a source electrode and a drainelectrode on the gate insulating film.
 27. The method according to claim26, further including the step of forming a pixel electrode on thesilicon nitride layer to overlap at least one of the data line and thegate line.